单晶硅片
规格：3寸至4寸单晶硅N型轻掺硅片，3寸至4寸单晶硅N/P型重掺硅片
通过掺磷或掺硼，采用MCZ工艺，生产尺寸为3寸、4寸，电阻0.003-55Ω.cm，厚度200-350um等不同N型单晶硅片或P型单晶硅片，并可根据客户要求生产定位边单晶硅片，倒角单晶硅片，N型单晶硅片，P型单晶硅片等，电阻率和厚度根据客户要求生产。
3寸单晶硅N型轻掺硅片
3-inch mono crystal silicon N-type light doped wafer
|
电阻率Ω·CM |
厚度μm |
晶向 |
寿命μs |
外径mm |
掺杂剂 |
形态 |
电阻率径向不均匀性 |
||||
|
线切片 |
研磨片 |
倒角片 |
定位片 |
||||||||
|
5-10 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
10-15 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
15-20 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
20-25 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
25-30 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
30-35 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
35-40 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
40-45 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
45-50 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
50-55 |
200-350 |
<111> |
＞100 |
76.2±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
4寸单晶硅N型轻掺硅片
4-inch mono crystal silicon N-type light doped wafer
|
电阻率Ω·CM |
厚度μm |
晶向 |
寿命μs |
外径mm |
掺杂剂 |
形态 |
电阻率径向不均匀性 |
||||
|
线切片 |
研磨片 |
倒角片 |
定位片 |
||||||||
|
5-10 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
10-15 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
15-20 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
20-25 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
25-30 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
30-35 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
35-40 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
40-45 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
45-50 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
|
50-55 |
200-350 |
<111> |
＞100 |
101.6±0.3 |
磷 |
√ |
√ |
√ |
√ |
≤20% |
|
3寸单晶硅重掺硅片
3-inch mono crystal silicon heavy doped wafer
|
电阻率Ω·CM |
厚度μm |
晶向 |
型号 |
外径mm |
掺杂剂 |
形态 |
电阻率径向不均匀性 |
||||
|
线切片 |
研磨片 |
倒角片 |
定位片 |
||||||||
|
0.003-0.005 |
200-350 |
<111> |
N/P |
76.2±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
|
0.005-0.008 |
200-350 |
<111> |
N/P |
76.2±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
|
0.02-0.03 |
200-350 |
<111> |
N/P |
76.2±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
4寸单晶硅重掺硅片
4 inch monocrystal silicon heavy doped wafer
|
电阻率Ω·CM |
厚度μm |
晶向 |
型号 |
外径mm |
掺杂剂 |
形态 |
电阻率径向不均匀性 |
||||
|
线切片 |
研磨片 |
倒角片 |
定位片 |
||||||||
|
0.003-0.005 |
200-350 |
<111> |
N/P |
101.6±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
|
0.005-0.008 |
200-350 |
<111> |
N/P |
101.6±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|
|
0.02-0.03 |
200-350 |
<111> |
N/P |
101.6±0.3 |
磷/硼 |
/ |
√ |
√ |
√ |
/ |
|